A semiconductor structure, comprising: a substrate comprising a first surface; a first insulative material disposed on at least a portion of the first surface, the first insulative material comprising a plurality of openings forming a path to the first surface; a first conductive material disposed on the first insulative material, the first conductive material being disposed so that the plurality of openings are substantially free of the first conductive material; a second insulative material disposed on the first conductive material and portions of the first insulative material, the second insulative material being disposed so that the plurality of openings are substantially free of the second insulative material; and a second conductive material being disposed on second insulative material and within plurality of openings so that some of the second conductive material disposed upon the second insulative material is in electrical contact with the substrate.