Patent Application Number: 2005289781
Filing Date: September 21, 2005Priority Date: September 28, 2004
Inventors: S. Jonathan Wang, Terry E. McMahon, Gregory T. Hindman, Dennis W. Tom, Simon Dodd, Frank R. Bryant, Richard Todd Miller
Applicants: Hewlett-Packard Development Company, L.P.
View Prior Art for Claim 31
A method of forming a semiconductor device, comprising: forming an insulative material over a first surface of the substrate; forming a first conductive material over the first insulative material; etching the first conductive material to form at least one opening that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material; forming a second insulative material over the first conductive material; and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contact regions the substrate.
Patent/Application # 5314841
Description
A method of having a frontside contact to a SOI wafer is described. Before any device processing steps a trench is etched through the SOI layers to the substrate. This trench is maintained during device processing and opened during source/drain implantation. At metallization an ohmic contact is made to the substrate.
United States