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| Summary / Description | A method of having a frontside contact to a SOI wafer is described. Before any device processing steps a trench is etched through the SOI layers to the substrate. This trench is maintained during device processing and opened during source/drain implantation. At metallization an ohmic contact is made to the substrate. |
| Type of Prior Art | Issued Patents - US |
| Country | United States of America |
| Patent/Application # | 5314841 |
| Kind Code | United States (US) - United STATES Patent - A |
| Patentee Name | International Business Machines Corporation |
| Relevant Pages, Columns, or Lines | See Fig 4 and related descript |
| URL | |
| Filing Date | May 24, 1994 |
| Additional Information | Note that above date is ISSUE DATE, NOT FILING DATE. |
| Notes | |
Excerpt See Figure 4 and all of column 2. |
A semiconductor structure, comprising: a substrate comprising a first surface; a first insulative material disposed on at least a portion of the first surface, the first insulative material comprising a plurality of openings forming a path to the first surface; a first conductive material disposed on the first insulative material, the first conductive material being disposed so that the plurality of openings are substantially free of the first conductive material; a second insulative material disposed on the first conductive material and portions of the first insulative material, the second insulative material being disposed so that the plurality of openings are substantially free of the second insulative material; and a second conductive material being disposed on second insulative material and within plurality of openings so that some of the second conductive material disposed upon the second insulative material is in electrical contact with the substrate.
| Relevance | Correspondences are as follows: substrate 10 (appl at hand) = substrate 20 (prior art) first insulative material (appl at hand) = Buried oxide 22 (prior art) first conductive material (appl at hand) = Si Film 24 (prior art) second insulative material (appl at hand) = LTO/PSG 32 (prior art) second conductive material (appl at hand) = contact metal 30 (prior art) |
A method of forming a semiconductor device, comprising: forming an insulative material over a first surface of the substrate; forming a first conductive material over the first insulative material; etching the first conductive material to form at least one opening that forms a path to the substrate that is substantially free of the first conductive material and the first insulative material; forming a second insulative material over the first conductive material; and forming a second conductive material over the second insulative material, wherein the second conductive material is formed in the opening and contact regions the substrate.
| Relevance | See notes regarding claim 1. |
United States